PART |
Description |
Maker |
IRG4PC40K |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)
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IRF[International Rectifier]
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B25H2S60KL B25H2S20KL B25H2S40KL B25H2S10KL B25H2S |
THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|600V V(RRM)|25A I(T) THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|200V V(RRM)|25A I(T) THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|400V V(RRM)|25A I(T) THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|100V V(RRM)|25A I(T) THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|1.2KV V(RRM)|25A I(T) THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|1KV V(RRM)|25A I(T) 晶闸管模块|可控硅|双|独立| 1KV交五(无线资源管理)|5A我(翻译
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SCHURTER AG
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BTA24-600BW |
TRIAC,600V V(DRM),25A I(T)RMS,TO-220AB
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ST
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APT6025BVR |
POWER MOS V 600V 25A 0.250 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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ADPOW[Advanced Power Technology]
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SSU2N60B SSR2N60B SSR2N60 SSU2N60BTU SSR2N60BTF SS |
600V N-Channel MOSFET 600V N-Channel MOSFET 1.8 A, 600 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 600V N-Channel B-FET / Substitute of SSU2N60A 600V N-Channel B-FET / Substitute of SSR2N60A
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Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
SC160C SC265D4 SC265D3 SC265D5 SC129D FB150D8 SC16 |
THYRISTOR MODULE|TRIAC TRIAC|400V V(DRM)|40A I(T)RMS|IST-3RT-1/2 TRIAC|400V V(DRM)|40A I(T)RMS|IST-3RT-1/4 TRIAC|400V V(DRM)|40A I(T)RMS|TO-208VAR1/4 TRIAC|400V V(DRM)|25A I(T)RMS|TO-220 TRIAC|400V V(DRM)|150A I(T)RMS|TO-200AB TRIAC|200V V(DRM)|150A I(T)RMS|TO-200AB TRIAC|200V V(DRM)|25A I(T)RMS|TO-220 TRIAC|300V V(DRM)|25A I(T)RMS|IST-3RT-1/4 TRIAC|300V V(DRM)|25A I(T)RMS|TO-208VAR1/4 TRIAC|200V V(DRM)|40A I(T)RMS|IST-3RT-1/4 TRIAC|200V V(DRM)|25A I(T)RMS|IST-3RT-1/4 TRIAC|300V V(DRM)|40A I(T)RMS|IST-3RT-1/4 TRIAC|300V V(DRM)|25A I(T)RMS|TO-220 TRIAC|600V V(DRM)|25A I(T)RMS|TO-220 TRIAC|400V V(DRM)|100A I(T)RMS|TO-200AB TRIAC|400V V(DRM)|300A I(T)RMS|TO-200VAR50 FUSE 1A FA SMT 1206 TRIAC|200V V(DRM)|300A I(T)RMS|TO-200VAR50 可控硅| 200伏五(DRM)的| 300口(T)的有效值|00VAR50 TRIAC|800V V(DRM)|150A I(T)RMS|STF-M20 可控硅| 800V的五(DRM)的| 150A口(T)的有效值|培训基金- M20 TRIAC|600V V(DRM)|150A I(T)RMS|TO-200AB 可控硅| 600V的五(DRM)的| 150A口(T)的有效值|00AB TRIAC|1.2KV V(DRM)|300A I(T)RMS|STF-M23 可控硅| 1.2KV五(DRM)的| 300口(T)的有效值|培训基金,一辆M23 TRIAC|600V V(DRM)|70A I(T)RMS|STF-M12 可控硅| 600V的五(DRM)的|0A口(T)的有效值|培训基金- M12 TRIAC|1.2KV V(DRM)|150A I(T)RMS|STF-M20 可控硅| 1.2KV五(DRM)的| 150A口(T)的有效值|培训基金- M20 TRIAC|200V V(DRM)|50A I(T)RMS|TO-208VARM8 可控硅| 200伏五(DRM)的| 50A条口(T)的有效值|08VARM8
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Cornell Dubilier Electronics, Inc. EPCOS AG SIEMENS AG
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FQI12N60C FQB12N60C FQB12N60CTM |
600V N-Channel MOSFET 12 A, 600 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET 600V N-Channel Advance QFET C-Series
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http:// FAIRCHILD SEMICONDUCTOR CORP Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
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FQI5N60C FQB5N60C FQB5N60CTM |
600V N-Channel MOSFET 4.5 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET 600V N-Channel Advance QFET C-Series
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
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M57704L 57704L |
RF AMPLIFIER,HYBRID,FLANGE MT,PLASTIC From old datasheet system 400-420MHz 12.5V,13W,FM MOBILE RADIO 400-420MHZ, 12.5V, 13W, FM MOBILE RADIO
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MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric & Electronics USA Mitsubishi Electric Corporation
|
F1826HD600 F1826CCD600 F1856HD600 F1856CAD1400 F18 |
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|600V V(RRM)|25A I(T) COMMON CATHODE DIODE ARRAY|MODULE-S THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|600V V(RRM)|55A I(T) COMMON ANODE DIODE ARRAY|MODULE-S 共阳极二极管阵列|模块 THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1.4KV V(RRM)|40A I(T) 晶闸管模块|倍增|半CNTLD |阳性| 1.4KV五(无线资源管理)| 40A条疙(T THYRISTOR MODULE|SCR DOUBLER|1.4KV V(RRM)|40A I(T) 晶闸管模块|可控硅倍增| 1.4KV五(无线资源管理)| 40A条疙T THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|600V V(RRM)|25A I(T)
|
MtronPTI
|
FQPF10N60C FQP10N60C |
600V N-Channel Advance Q-FET C-Series 600V N-Channel MOSFET
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FAIRCHILD[Fairchild Semiconductor]
|